Researchers at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) have developed a simple yet accurate method for finding defects in the latest generation of silicon carbide transistors. This will speed up the process of developing more energy-efficient transistors in future. They have now published their findings in Communications Physics.
from General Physics News - Science News, Physics News, Physics, Material Sciences, Science http://bit.ly/2D2vhgy
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