Researchers have successfully demonstrated a method to switch a novel material between two different nonvolatile states at very high speeds and with great accuracy. The physical constituents of the device in question are significantly robust against external influences such as magnetic fields. These findings could lead to a high-speed and high-capacity memory device with high energy efficiency.
from General Physics News - Science News, Physics News, Physics, Material Sciences, Science https://ift.tt/2VKfr25
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