Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics.
from General Physics News - Science News, Physics News, Physics, Material Sciences, Science https://ift.tt/3gxdEaK
No comments:
Post a Comment